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NVMFS5113PLT1G

MOSFET P-CH 60V 64A SO8FL

Manufacturer:
ON Semiconductor
Package:
8-PowerTDFN
Packing:
Reel
Datasheet:
NVMFS5113PLT1G
Delivery services:
Payment method:
In stock:
3440
Order quantity:

Specifications

Part Number
NVMFS5113PLT1G
Manufacturer
ON Semiconductor
Description
MOSFET P-CH 60V 64A SO8FL
Package
Tape & Reel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
83nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
4400pF @ 25V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs
14 mOhm @ 17A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case
8-PowerTDFN

Description

The NVMFS5113PLT1G is a Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ON Semiconductor. Here are the key features and specifications of the NVMFS5113PLT1G:


Features:

1. Low On-Resistance: The NVMFS5113PLT1G offers low on-resistance, resulting in reduced power losses and improved efficiency in power switching applications.


2. Fast Switching Speed: It has a fast switching speed, allowing for efficient power conversion and control.


3. Small Footprint: The MOSFET is available in a compact package, enabling space-efficient designs.


4. Avalanche Energy Rated: The NVMFS5113PLT1G is avalanche energy rated, ensuring reliable operation in applications with high voltage spikes or inductive loads.


5. RoHS Compliant: It meets the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly.


Specifications:

1. Drain-Source Voltage: The NVMFS5113PLT1G can handle a maximum drain-source voltage of 30V.


2. Continuous Drain Current: It has a maximum continuous drain current of 15A, depending on the operating conditions and thermal management.


3. On-Resistance: The MOSFET features a low on-resistance, typically in the milliohm range, enhancing efficiency and reducing power dissipation.


4. Gate-Source Voltage (Threshold): The threshold voltage for the gate-source voltage is typically around 1.3V.


5. Gate Charge: The gate charge of the NVMFS5113PLT1G is specified, indicating the amount of charge required to fully turn on or turn off the MOSFET.


Applications:

The NVMFS5113PLT1G Power MOSFET is commonly used in various applications, including:


1. Power Supplies: It can be used in DC-DC converters, switching power supplies, and voltage regulators to control power flow and voltage regulation.


2. Motor Control: The MOSFET is suitable for motor control applications, including motor drivers, robotics, and industrial automation systems.


3. LED Lighting: It is used in LED driver circuits for efficient power control and dimming of LED lighting systems.


4. Battery Management: The NVMFS5113PLT1G can be employed in battery management systems, including battery chargers and power management circuits.


5. Power Switching: It is utilized in power switching applications, such as relay drivers, power switches, and load switches.


6. Automotive Electronics: The MOSFET is suitable for automotive applications, including power distribution modules, lighting control, and electric vehicle systems.


Please note that the specific application and usage conditions should be considered when incorporating the NVMFS5113PLT1G into a design. It is recommended to refer to the datasheet and technical documentation provided by ON Semiconductor for detailed information and design considerations.

Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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