PBHV9115T T/R

Manufacturer:

NXP

Product Category:

Bipolar Transistors - BJT

Mounting Style:

SMD/SMT

Package / Case:

TO-236AB-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

150 V

Collector- Base Voltage VCBO:

200 V

Emitter- Base Voltage VEBO:

6 V

Maximum DC Collector Current:

1 A

Pd - Power Dissipation:

300 mW

Gain Bandwidth Product fT:

115 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Brand:

NXP Semiconductors

DC Current Gain hFE Max:

100 at 50 mA, 10 V

Height:

1 mm

Length:

3 mm

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Technology:

Si

Width:

1.4 mm

Part # Aliases:

PBHV9115T,215