PBSS4120T T/R

Manufacturer:

NXP

Product Category:

Bipolar Transistors - BJT

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

20 V

Collector- Base Voltage VCBO:

30 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

250 mV

Pd - Power Dissipation:

480 mW

Gain Bandwidth Product fT:

100 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Reel

Packaging:

Cut Tape

Brand:

NXP Semiconductors

Continuous Collector Current:

1 A

DC Collector/Base Gain hfe Min:

350

Height:

1 mm

Length:

3 mm

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

3000

Subcategory:

Transistors

Technology:

Si

Width:

1.4 mm

Part # Aliases:

PBSS4120T,215

Unit Weight:

0.000282 oz