PBSS4230T T/R

Manufacturer:

Shindengen

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

30 V

Collector- Base Voltage VCBO:

40 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

2 A

Pd - Power Dissipation:

480 mW

Gain Bandwidth Product fT:

230 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Brand:

Shindengen

DC Collector/Base Gain hfe Min:

350 at 100 mA, 2 V

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si