PBSS4350SS T/R

Manufacturer:

NXP

Product Category:

Bipolar Transistors - BJT

Mounting Style:

SMD/SMT

Package / Case:

SOIC-8

Transistor Polarity:

NPN

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

50 V

Collector- Base Voltage VCBO:

50 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

2.7 A

Pd - Power Dissipation:

2 W

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Brand:

NXP Semiconductors

DC Current Gain hFE Max:

300 at 100 mA, 2 V

Height:

1.45 mm

Length:

5 mm

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Technology:

Si

Width:

4 mm

Part # Aliases:

PBSS4350SS,115

Unit Weight:

0.008889 oz