- Manufacturer:
- Nexperia
- Product Category:
- Bipolar Transistors - BJT
- Brand:
- Nexperia
- Product Type:
- BJTs - Bipolar Transistors
- Subcategory:
- Transistors
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- SOT-223
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Bipolar Transistors - BJT
PBSS5350Z Product Details
General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223(SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4350Z
Features and benefits
• Low collector-emitter saturation voltage VCEsat• High collector current capability: IC and ICM• High collector current gain (hFE) at high IC• High energy efficiency due to less heat generation• AEC-Q101 qualified
*The above information is compiled by Baiyuan Technology, and the specific product data sheet shall prevail!