PBSS8110D T/R

Manufacturer:

onsemi

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

100 V

Collector- Base Voltage VCBO:

120 V

Emitter- Base Voltage VEBO:

5 V

Maximum DC Collector Current:

1 A

Pd - Power Dissipation:

700 mW

Gain Bandwidth Product fT:

100 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Brand:

onsemi / Fairchild

DC Collector/Base Gain hfe Min:

150 at 1 mA, 10 V

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si