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PHE13003C,412

Bipolar Transistors - BJT Silicon diffused power transistor

Manufacturer:
WeEn Semiconductors
Package:
TO-92-3
Packing:
Datasheet:
PHE13003C,412
Delivery services:
Payment method:
In stock:
2926
Order quantity:

Specifications

Manufacturer:
WeEn Semiconductors
Product Category:
Bipolar Transistors - BJT
Mounting Style:
Through Hole
Package / Case:
TO-92-3
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
400 V
Collector- Base Voltage VCBO:
700 V
Emitter- Base Voltage VEBO:
9 V
Collector-Emitter Saturation Voltage:
1.5 V
Maximum DC Collector Current:
1.5 A
Pd - Power Dissipation:
2.1 W
Gain Bandwidth Product fT:
-
Minimum Operating Temperature:
-
Maximum Operating Temperature:
+ 150 C
Brand:
WeEn Semiconductors
DC Collector/Base Gain hfe Min:
5
DC Current Gain hFE Max:
25
Product Type:
BJTs - Bipolar Transistors
Factory Pack Quantity:
5000
Subcategory:
Transistors
Technology:
Si
Part # Aliases:
934063922412
Unit Weight:
0.007654 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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