PHE13009/DG,127

Manufacturer:

WeEn Semiconductors

Product Category:

Bipolar Transistors - BJT

Mounting Style:

Through Hole

Package / Case:

TO-220AB-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

400 V

Collector- Base Voltage VCBO:

700 V

Emitter- Base Voltage VEBO:

-

Collector-Emitter Saturation Voltage:

320 mV

Maximum DC Collector Current:

12 A

Pd - Power Dissipation:

80 W

Gain Bandwidth Product fT:

-

Minimum Operating Temperature:

-

Maximum Operating Temperature:

+ 150 C

Brand:

WeEn Semiconductors

DC Collector/Base Gain hfe Min:

8

DC Current Gain hFE Max:

40

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Technology:

Si

Part # Aliases:

934065587127

Unit Weight:

0.211644 oz