- Part Number
- RCD100N19TL
- Manufacturer
- Rohm Semiconductor
- Description
- MOSFET N-CH 190V 10A CPT3
- Package
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 190V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2000pF @ 25V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 850mW (Ta), 20W (Tc)
- Rds On (Max) @ Id, Vgs
- 182 mOhm @ 5A, 10V
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- CPT3
- Package / Case
