- Manufacturer:
- ROHM Semiconductor
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- HUML2020L-8
- Transistor Polarity:
- P-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 20 V
- Id - Continuous Drain Current:
- 10 A
- Rds On - Drain-Source Resistance:
- 15.6 mOhms
- Vgs - Gate-Source Voltage:
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage:
- 500 mV
- Qg - Gate Charge:
- 23.5 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 2 W
- Channel Mode:
- Enhancement
- Brand:
- ROHM Semiconductor
- Configuration:
- Single
- Fall Time:
- 86 ns
- Product Type:
- MOSFET
- Rise Time:
- 43 ns
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 P-Channel
- Typical Turn-Off Delay Time:
- 110 ns
- Typical Turn-On Delay Time:
- 16 ns
- Part # Aliases:
- RF4C100BCTCR
- Unit Weight:
- 0.027197 oz
