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RS1E321GNTB1 original picture
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RS1E321GNTB1

MOSFET RS1E321GN is a power MOSFET with low-on resistance and High power package, suitable for switching.

Manufacturer:
ROHM Semiconductor
Package:
HSOP-8
Packing:
Reel
Datasheet:
RS1E321GNTB1
Delivery services:
Payment method:
In stock:
1826
Order quantity:

Specifications

Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
HSOP-8
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
2.1 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
1.2 V
Qg - Gate Charge:
42.8 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
34 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Brand:
ROHM Semiconductor
Configuration:
Single
Fall Time:
28.5 ns
Product Type:
MOSFET
Rise Time:
15.6 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
74.6 ns
Typical Turn-On Delay Time:
21.8 ns
Unit Weight:
0.027197 oz
Service Guarantees

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Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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