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RS1E350BNTB1 original picture
RS1E350BNTB1 medium  picture
RS1E350BNTB1 thumbnail  picture
*Images are for reference only.

RS1E350BNTB1

MOSFET MOSFET

Manufacturer:
ROHM Semiconductor
Package:
HSOP-8
Packing:
Reel
Datasheet:
RS1E350BNTB1
Delivery services:
Payment method:
In stock:
2048
Order quantity:

Specifications

Manufacturer:
ROHM Semiconductor
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
HSOP-8
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
80 A
Rds On - Drain-Source Resistance:
1.7 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Qg - Gate Charge:
185 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
35 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
ROHM Semiconductor
Configuration:
Single
Fall Time:
105 ns
Forward Transconductance - Min:
Single
Product Type:
MOSFET
Rise Time:
215 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
235 ns
Typical Turn-On Delay Time:
45 ns
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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