- Manufacturer:
- ROHM Semiconductor
- Product Category:
- MOSFET
- Technology:
- SiC
- Mounting Style:
- Through Hole
- Package / Case:
- TO-247-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 1.2 kV
- Id - Continuous Drain Current:
- 22 A
- Rds On - Drain-Source Resistance:
- 160 mOhms
- Vgs - Gate-Source Voltage:
- - 6 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage:
- 1.6 V
- Qg - Gate Charge:
- 62 nC
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 175 C
- Pd - Power Dissipation:
- 165 W
- Channel Mode:
- Enhancement
- Packaging:
- Tube
- Brand:
- ROHM Semiconductor
- Configuration:
- Single
- Fall Time:
- 27 ns
- Forward Transconductance - Min:
- 2.4 S
- Product Type:
- MOSFET
- Rise Time:
- 25 ns
- Series:
- SCT2x
- Factory Pack Quantity:
- 360
- Subcategory:
- MOSFETs
- Transistor Type:
- 1 N-Channel Power MOSFET
- Typical Turn-Off Delay Time:
- 67 ns
- Typical Turn-On Delay Time:
- 23 ns
- Part # Aliases:
- SCT2160KE
- Unit Weight:
- 0.211644 oz
