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SCT30N120H

MOSFET Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm Complete Your Design

Manufacturer:
STMicroelectronics
Package:
H2PAK-2
Packing:
Reel
Datasheet:
SCT30N120H
Delivery services:
Payment method:
In stock:
2367
Order quantity:

Specifications

Manufacturer:
STMicroelectronics
Product Category:
MOSFET
Technology:
SiC
Mounting Style:
SMD/SMT
Package / Case:
H2PAK-2
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
1.2 kV
Id - Continuous Drain Current:
45 A
Rds On - Drain-Source Resistance:
90 mOhms
Vgs - Gate-Source Voltage:
- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:
1.8 V
Qg - Gate Charge:
105 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
270 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
STMicroelectronics
Configuration:
Single
Fall Time:
28 ns
Product Type:
MOSFET
Rise Time:
20 ns
Series:
SCT30N120H
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
45 ns
Typical Turn-On Delay Time:
19 ns
Unit Weight:
0.139332 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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