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SI1012CR-T1-GE3 original picture
SI1012CR-T1-GE3 medium  picture
SI1012CR-T1-GE3 thumbnail  picture
*Images are for reference only.

SI1012CR-T1-GE3

MOSFET 20V Vds 8V Vgs SC75A

Manufacturer:
Vishay Semiconductors
Package:
SC-75-3
Packing:
Reel
Datasheet:
SI1012CR-T1-GE3
Delivery services:
Payment method:
In stock:
3336
Order quantity:

Specifications

Manufacturer:
Vishay
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SC-75-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
600 mA
Rds On - Drain-Source Resistance:
396 mOhms
Vgs - Gate-Source Voltage:
- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage:
400 mV
Qg - Gate Charge:
1.3 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
240 mW
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Vishay Semiconductors
Configuration:
Single
Fall Time:
11 ns
Forward Transconductance - Min:
7.5 S
Height:
0.8 mm
Length:
1.575 mm
Product Type:
MOSFET
Rise Time:
16 ns
Series:
SI1
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
11 ns
Width:
0.76 mm
Part # Aliases:
SI1012CR-GE3
Unit Weight:
0.000071 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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