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SI2312BDS-T1-BE3 original picture
SI2312BDS-T1-BE3 medium  picture
SI2312BDS-T1-BE3 thumbnail  picture
*Images are for reference only.

SI2312BDS-T1-BE3

MOSFET N-CHANNEL 20-V (D-S)

Manufacturer:
Vishay / Siliconix
Package:
SOT-23-3
Packing:
Reel
Datasheet:
SI2312BDS-T1-BE3
Delivery services:
Payment method:
In stock:
2786
Order quantity:

Specifications

Manufacturer:
Vishay
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
3.9 A
Rds On - Drain-Source Resistance:
31 mOhms
Vgs - Gate-Source Voltage:
- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage:
850 mV
Qg - Gate Charge:
7.5 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
750 mW
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Vishay / Siliconix
Configuration:
Single
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
30 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
SI2312BDS-T1-E3
Unit Weight:
0.000282 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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