SI2324DS-T1-GE3

Manufacturer:

Vishay

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

2.3 A

Rds On - Drain-Source Resistance:

234 mOhms

Vgs - Gate-Source Voltage:

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Qg - Gate Charge:

10.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Packaging:

Cut Tape

Packaging:

MouseReel

Brand:

Vishay Semiconductors

Configuration:

Single

Fall Time:

12 ns

Height:

1.45 mm

Length:

2.9 mm

Product Type:

MOSFET

Rise Time:

26 ns

Series:

SI2

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Transistor Type:

1 N-Channel

Typical Turn-Off Delay Time:

17 ns

Typical Turn-On Delay Time:

30 ns

Width:

1.6 mm

Part # Aliases:

SI2324DS-T1-BE3

Unit Weight:

0.000282 oz