SI4114DY-T1-GE3

MOSFET N-CH 20V 20A 8-SOIC

Manufacturer：: Vishay Siliconix

Package：: 8-SOIC (0.154", 3.90mm Width)

Packing：

Datasheet：: SI4114DY-T1-GE3

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In stock：: 5648

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Specifications

Part Number: SI4114DY-T1-GE3

Manufacturer: Vishay Siliconix

Description: MOSFET N-CH 20V 20A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Technology: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss): 20V

Current - Continuous Drain (Id) @ 25°C: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Vgs(th) (Max) @ Id: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V

Vgs (Max): ±16V

FET Feature: -

Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)

Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V

Operating Temperature: -55°C ~ 150°C (TJ)

Mounting Type: Surface Mount

Supplier Device Package: 8-SO

Package / Case

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