Wed, Jun29,14:37:12 GMT+8
English
USD

English

Chinese

Japanese

Korean

Russian

IC
IC
*Images are for reference only.

SI4562DY-T1-E3

MOSFET N/P-CH 20V 8-SOIC

Manufacturer:
Vishay Siliconix
Package:
8-SOIC (0.154", 3.90mm Width)
Packing:
Datasheet:
SI4562DY-T1-E3
Delivery services:
Payment method:
In stock:
706836
Order quantity:

Specifications

Part Number
SI4562DY-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET N/P-CH 20V 8-SOIC
Package
8-SOIC (0.154", 3.90mm Width)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
25 mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

Products Recommended

  • Part Number
  • Manufacturer
  • Description
  • Packaging
  • In Stock
  • Order quantity
  • Rohm Semiconductor
  • 20V PCH+PCH MIDDLE POWER MOSFET,
  • 23028
  •  
  • Diodes Incorporated
  • MOSFET 2P-CH 20V U-DFN2030-6
  • 24690
  •  
  • Nexperia USA Inc.
  • MOSFET ARRAY 2NCH 30V DFN2020D-6
  • 25632
  •  
  • Vishay Siliconix
  • MOSFET N/P-CH 30V 2.5A 6-TSOP
  • 653100
  •  
  • Diodes Incorporated
  • MOSFET 2P-CH 40V 5.1A 8SOIC
  • 25428
  •  
The cookie settings on this website are set to 'allow all cookies' to give you the very best experience. Please click Accept Cookies to continue to use the site.