Wed, Jun29,14:37:12 GMT+8
English
USD

English

Chinese

Japanese

Korean

Russian

IC
IC
*Images are for reference only.

SI4563DY-T1-GE3

MOSFET N/P-CH 40V 8A 8-SOIC

Manufacturer:
Vishay Siliconix
Package:
8-SOIC (0.154", 3.90mm Width)
Packing:
Datasheet:
SI4563DY-T1-GE3
Delivery services:
Payment method:
In stock:
6224
Order quantity:

Specifications

Part Number
SI4563DY-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N/P-CH 40V 8A 8-SOIC
Package
8-SOIC (0.154", 3.90mm Width)
FET Feature
Standard
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
8A
Rds On (Max) @ Id, Vgs
16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
2390pF @ 20V
Power - Max
3.25W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

Products Recommended

  • Part Number
  • Manufacturer
  • Description
  • Packaging
  • In Stock
  • Order quantity
  • Microsemi Corporation
  • MOSFET 6N-CH 200V 104A SP6-P
  • 4448
  •  
  • Microsemi Corporation
  • MOSFET 6N-CH 100V 139A SP6-P
  • 2752
  •  
  • Microsemi Corporation
  • MOSFET 6N-CH 500V 51A SP6-P
  • 7040
  •  
  • Microsemi Corporation
  • MOSFET 2N-CH 1200V 34A SP4
  • 3344
  •  
  • Microsemi Corporation
  • MOSFET 4N-CH 900V 30A SP4
  • 6016
  •  
The cookie settings on this website are set to 'allow all cookies' to give you the very best experience. Please click Accept Cookies to continue to use the site.