Wed, Jun29,14:37:12 GMT+8
English
USD

English

Chinese

Japanese

Korean

Russian

IC
IC
*Images are for reference only.

SI4808DY-T1-E3

MOSFET 2N-CH 30V 5.7A 8SOIC

Manufacturer:
Vishay Siliconix
Package:
8-SOIC (0.154", 3.90mm Width)
Packing:
Datasheet:
SI4808DY-T1-E3
Delivery services:
Payment method:
In stock:
396420
Order quantity:

Specifications

Part Number
SI4808DY-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 30V 5.7A 8SOIC
Package
8-SOIC (0.154", 3.90mm Width)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5.7A
Rds On (Max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

Products Recommended

  • Part Number
  • Manufacturer
  • Description
  • Packaging
  • In Stock
  • Order quantity
  • Vishay Siliconix
  • MOSFET 2P-CH 12V 4.5A SC-70-6
  • 3506892
  •  
  • Diodes Incorporated
  • MOSFET 2P-CH 20V 3.2A 6UDFN
  • 3424
  •  
  • Diodes Incorporated
  • MOSFET 2N/2P-CH 30V 8SOIC
  • 6256
  •  
  • Central Semiconductor Corp
  • MOSFET 2N-CH 60V 0.28A SOT563
  • 3376
  •  
  • Alpha & Omega Semiconductor Inc.
  • MOSFET 2N-CH 30V 19A/26A
  • 6096
  •  
The cookie settings on this website are set to 'allow all cookies' to give you the very best experience. Please click Accept Cookies to continue to use the site.