SI4946BEY-T1-E3

Manufacturer:

Vishay

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOIC-8

Transistor Polarity:

N-Channel

Number of Channels:

2 Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

6.5 A

Rds On - Drain-Source Resistance:

41 mOhms

Vgs - Gate-Source Voltage:

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage:

1 V

Qg - Gate Charge:

25 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

3.7 W

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Packaging:

Cut Tape

Packaging:

-

Brand:

Vishay Semiconductors

Configuration:

Dual

Fall Time:

10 ns

Forward Transconductance - Min:

24 S

Height:

1.75 mm

Length:

4.9 mm

Product Type:

MOSFET

Rise Time:

12 ns

Series:

SI4

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Transistor Type:

2 N-Channel

Typical Turn-Off Delay Time:

25 ns

Typical Turn-On Delay Time:

10 ns

Width:

3.9 mm

Part # Aliases:

SI4946BEY-E3

Unit Weight:

0.006596 oz