The SI5515CDC-T1-GE3 is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. It is designed for use in various power management applications and switching circuits.
Here are some key specifications of the SI5515CDC-T1-GE3:
1. MOSFET Type: N-Channel
2. Drain-Source Voltage (VDS): Typically up to 20V
3. Continuous Drain Current (ID): Typically up to 3.8A
4. On-Resistance (RDS(ON)): Typically around 0.045 ohms
5. Gate-Source Voltage (VGS): Typically ±20V
6. Package Type: PowerPAK® 1212-8S (a small surface-mount package)
Applications:
The SI5515CDC-T1-GE3 MOSFET is commonly used in various power management circuits, load switches, DC-DC converters, battery protection, and other applications where efficient switching and power control are required.
Please note that the specifications mentioned above are typical values and might vary slightly from the actual part you receive. Always refer to the datasheet provided by the manufacturer for precise information, electrical characteristics, and proper usage guidelines.
