SI7172DP-T1-GE3

Manufacturer:

Vishay

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-SO-8

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

200 V

Id - Continuous Drain Current:

25 A

Rds On - Drain-Source Resistance:

70 mOhms

Vgs - Gate-Source Voltage:

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage:

2 V

Qg - Gate Charge:

77 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

96 W

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Packaging:

Cut Tape

Packaging:

MouseReel

Brand:

Vishay Semiconductors

Configuration:

Single

Height:

1.04 mm

Length:

6.15 mm

Product Type:

MOSFET

Series:

SI7

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Width:

5.15 mm

Part # Aliases:

SI7172DP-GE3

Unit Weight:

0.017870 oz