Wed, Jun29,14:37:12 GMT+8
English
USD

English

Chinese

Japanese

Korean

Russian

IC
IC
*Images are for reference only.

SI8900EDB-T2-E1

MOSFET 2N-CH 20V 5.4A 10-MFP

Manufacturer:
Vishay Siliconix
Package:
10-UFBGA, CSPBGA
Packing:
Datasheet:
SI8900EDB-T2-E1
Delivery services:
Payment method:
In stock:
8088
Order quantity:

Specifications

Part Number
SI8900EDB-T2-E1
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 20V 5.4A 10-MFP
Package
10-UFBGA, CSPBGA
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.4A
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
10-UFBGA, CSPBGA
Supplier Device Package
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

Products Recommended

  • Part Number
  • Manufacturer
  • Description
  • Packaging
  • In Stock
  • Order quantity
  • Infineon Technologies
  • DIODE TUNING 16V 20MA SC-79
  • 7456
  •  
  • Infineon Technologies
  • DIODE TUNING 10V 20MA SCD-80
  • 6368
  •  
  • Infineon Technologies
  • DIODE VAR CAP 18V 50MA SOT-23
  • 5872
  •  
The cookie settings on this website are set to 'allow all cookies' to give you the very best experience. Please click Accept Cookies to continue to use the site.