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SI9945BDY-T1-GE3 original picture
SI9945BDY-T1-GE3 medium  picture
SI9945BDY-T1-GE3 thumbnail  picture
*Images are for reference only.

SI9945BDY-T1-GE3

MOSFET 60V Vds 20V Vgs SO-8

Manufacturer:
Vishay Semiconductors
Package:
SOIC-8
Packing:
Reel
Datasheet:
SI9945BDY-T1-GE3
Delivery services:
Payment method:
In stock:
2749
Order quantity:

Specifications

Manufacturer:
Vishay
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOIC-8
Transistor Polarity:
N-Channel
Number of Channels:
2 Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
5.3 A
Rds On - Drain-Source Resistance:
58 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
1 V
Qg - Gate Charge:
13 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
3.1 W
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Vishay Semiconductors
Configuration:
Dual
Fall Time:
10 ns
Forward Transconductance - Min:
15 S
Product Type:
MOSFET
Rise Time:
15 ns, 65 ns
Series:
SI9
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Transistor Type:
2 N-Channel
Typical Turn-Off Delay Time:
10 ns, 15 ns
Typical Turn-On Delay Time:
15 ns, 20 ns
Part # Aliases:
SI9945BDY-GE3
Unit Weight:
0.026455 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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