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SIA914DJ-T1-GE3

MOSFET 2N-CH 20V 4.5A SC70-6

Manufacturer:
Vishay Siliconix
Package:
PowerPAK? SC-70-6 Dual
Packing:
Reel
Datasheet:
SIA914DJ-T1-GE3
Delivery services:
Payment method:
In stock:
5749
Order quantity:

Specifications

Part Number
SIA914DJ-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 20V 4.5A SC70-6
Package
Tape & Reel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
4.5A
Rds On (Max) @ Id, Vgs
53 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 10V
Power - Max
6.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK? SC-70-6 Dual
Supplier Device Package
PowerPAK? SC-70-6 Dual

Description

The SIA914DJ-T1-GE3 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Siliconix. This component is designed for high-performance switching applications, offering efficient control of current flow in electronic circuits.


Features:

  1. Dual MOSFET Configuration: The SIA914DJ-T1-GE3 contains two independent N-channel MOSFETs in a single package, allowing for dual-channel switching capabilities.
  2. Low On-Resistance: The MOSFETs feature low on-resistance (RDS(on)), resulting in minimal voltage drop and power dissipation during conduction.
  3. Fast Switching: With low gate charge and capacitance, the MOSFETs facilitate fast switching speeds, reducing switching losses.
  4. High Current Handling: The component is capable of handling moderate to high current levels, making it suitable for power switching applications.
  5. Compact Package: Designed in a compact surface-mount package, the component conserves space on the circuit board.


Specifications:

  • Configuration: Dual N-Channel MOSFET
  • On-Resistance (RDS(on)): Low resistance values for efficient conduction
  • Gate-Source Voltage (VGS): Suitable gate voltage range for proper switching control
  • Current Handling: Capable of handling moderate to high current levels
  • Switching Speed: Fast switching characteristics due to low gate charge
  • Package: Compact surface-mount package


Applications:
The SIA914DJ-T1-GE3 dual N-channel MOSFET finds applications in various electronic systems and scenarios:

  1. Power Management: Used in power switching circuits, voltage regulators, and DC-DC converters for efficient current control.
  2. Motor Control: Applied in motor control systems for switching and driving high-current loads.
  3. Power Supplies: Utilized in switch-mode power supplies and voltage regulators for efficient power delivery.
  4. Inverters: Employed in DC-AC inverters for converting direct current to alternating current in applications such as solar inverters.
  5. Electronic Load Switching: Used in load switches to control the connection and disconnection of loads in various systems.
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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