SIA923AEDJ-T1-GE3

Manufacturer:

Vishay

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SC-70-6

Transistor Polarity:

P-Channel

Number of Channels:

2 Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

4.5 A

Rds On - Drain-Source Resistance:

44 mOhms

Vgs - Gate-Source Voltage:

- 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage:

900 mV

Qg - Gate Charge:

25 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

7.8 W

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Packaging:

Cut Tape

Packaging:

MouseReel

Brand:

Vishay Semiconductors

Configuration:

Dual

Fall Time:

10 ns

Forward Transconductance - Min:

11 S

Height:

0.75 mm

Length:

2.05 mm

Product Type:

MOSFET

Rise Time:

16 ns

Series:

SIA

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Transistor Type:

2 P-Channel

Typical Turn-Off Delay Time:

30 ns

Typical Turn-On Delay Time:

15 ns

Width:

2.05 mm

Unit Weight:

0.000988 oz