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SIHD7N60ET1-GE3 original picture
SIHD7N60ET1-GE3 medium  picture
SIHD7N60ET1-GE3 thumbnail  picture
*Images are for reference only.

SIHD7N60ET1-GE3

MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS

Manufacturer:
Vishay Semiconductors
Package:
TO-252-3
Packing:
Reel
Datasheet:
SIHD7N60ET1-GE3
Delivery services:
Payment method:
In stock:
3340
Order quantity:

Specifications

Manufacturer:
Vishay
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
7 A
Rds On - Drain-Source Resistance:
600 mOhms
Vgs - Gate-Source Voltage:
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
Vishay Semiconductors
Configuration:
Single
Fall Time:
14 ns
Product Type:
MOSFET
Rise Time:
13 ns
Series:
E
Factory Pack Quantity:
2000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.011640 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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