- Part Number
- SIHW30N60E-GE3
- Manufacturer
- Vishay Siliconix
- Description
- MOSFET N-CH 600V 29A TO-247AD
- Package
- TO-3P-3 Full Pack
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2600pF @ 100V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 250W (Tc)
- Rds On (Max) @ Id, Vgs
- 125 mOhm @ 15A, 10V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247AD
- Package / Case
