SISS23DN-T1-GE3

Manufacturer:

Vishay

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-1212-8

Transistor Polarity:

P-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

50 A

Rds On - Drain-Source Resistance:

3.5 mOhms

Vgs - Gate-Source Voltage:

- 8 V, + 8 V

Vgs th - Gate-Source Threshold Voltage:

900 mV

Qg - Gate Charge:

300 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

57 W

Channel Mode:

Enhancement

Tradename:

TrenchFET, PowerPAK

Packaging:

Reel

Packaging:

Cut Tape

Packaging:

MouseReel

Brand:

Vishay Semiconductors

Configuration:

Single

Fall Time:

50 ns

Forward Transconductance - Min:

44 S

Height:

1.04 mm

Length:

3.3 mm

Product Type:

MOSFET

Rise Time:

50 ns

Series:

SIS

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Transistor Type:

1 P-Channel

Typical Turn-Off Delay Time:

140 ns

Typical Turn-On Delay Time:

45 ns

Width:

3.3 mm

Unit Weight:

0.032487 oz