SMBT 3904 E6327

Manufacturer:

Bourns

Product Category:

Bipolar Transistors - BJT

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

40 V

Collector- Base Voltage VCBO:

60 V

Emitter- Base Voltage VEBO:

6 V

Maximum DC Collector Current:

200 mA

Pd - Power Dissipation:

330 mW

Gain Bandwidth Product fT:

300 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Brand:

Bourns

DC Collector/Base Gain hfe Min:

40 at 100 uA, 1 V

Product Type:

BJTs - Bipolar Transistors

Subcategory:

Transistors

Technology:

Si