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SPD04N80C3ATMA1 original picture
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*Images are for reference only.

SPD04N80C3ATMA1

MOSFET LOW POWER_LEGACY

Manufacturer:
Infineon Technologies
Package:
TO-252-3
Packing:
Reel
Datasheet:
SPD04N80C3ATMA1
Delivery services:
Payment method:
In stock:
2583
Order quantity:

Specifications

Manufacturer:
Infineon
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
4 A
Rds On - Drain-Source Resistance:
1.1 Ohms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Qg - Gate Charge:
31 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
63 W
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Packaging:
Cut Tape
Brand:
Infineon Technologies
Configuration:
Single
Fall Time:
12 ns
Height:
2.3 mm
Length:
6.5 mm
Product Type:
MOSFET
Rise Time:
15 ns
Series:
CoolMOS C3
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
72 ns
Typical Turn-On Delay Time:
25 ns
Width:
6.22 mm
Part # Aliases:
SPD04N80C3 SP001117768
Unit Weight:
0.011640 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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