- Part Number
- SPI11N65C3HKSA1
- Manufacturer
- Infineon Technologies
- Description
- MOSFET N-CH 650V 11A TO-262
- Package
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 3.9V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs
- 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 1200pF @ 25V
- Vgs (Max)
- ±20V
- FET Feature
- -
- Power Dissipation (Max)
- 125W (Tc)
- Rds On (Max) @ Id, Vgs
- 380 mOhm @ 7A, 10V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- PG-TO262-3-1
- Package / Case
