SQ2318AES-T1_BE3

Manufacturer:

Vishay

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

40 V

Id - Continuous Drain Current:

8 A

Rds On - Drain-Source Resistance:

31 mOhms

Vgs - Gate-Source Voltage:

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Qg - Gate Charge:

8.7 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

3 W

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Packaging:

Cut Tape

Packaging:

MouseReel

Brand:

Vishay / Siliconix

Fall Time:

5.7 ns

Product Type:

MOSFET

Rise Time:

8.4 ns

Series:

SQ

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Transistor Type:

1 N-Channel

Typical Turn-Off Delay Time:

12 ns

Typical Turn-On Delay Time:

7.5 ns

Part # Aliases:

SQ2318AES-T1_GE3