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SQP50N06-09L_GE3

MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified

Manufacturer:
Vishay / Siliconix
Package:
TO-220-3
Packing:
Datasheet:
SQP50N06-09L_GE3
Delivery services:
Payment method:
In stock:
1821
Order quantity:

Specifications

Manufacturer:
Vishay
Product Category:
MOSFET
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
50 A
Rds On - Drain-Source Resistance:
7.1 mOhms
Vgs - Gate-Source Voltage:
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:
1.5 V
Qg - Gate Charge:
72 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
136 W
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Tradename:
TrenchFET
Brand:
Vishay / Siliconix
Configuration:
Single
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
11 ns
Series:
SQ
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Typical Turn-Off Delay Time:
27 ns
Typical Turn-On Delay Time:
10 ns
Unit Weight:
0.068784 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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