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SQS423EN-T1-GE3  original picture
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SQS423EN-T1-GE3

Manufacturer:
Vishay Siliconix
Package:
PowerPAK-1212-8
Packing:
Reel
Datasheet:
SQS423EN-T1-GE3
Delivery services:
Payment method:
In stock:
2256
Order quantity:

Specifications

Mfr. #
SQS423EN-T1-GE3
Manufacturer
Vishay Siliconix
Package
Tape&Reel
Product Category
MOSFET
Id - Continuous Drain Current
16 A
Vds - Drain-Source Breakdown Voltage
- 30 V
Rds On - Drain-Source Resistance
18 mOhms
Transistor Polarity
P - Channel
Vgs th - Gate-Source Threshold Voltage
2.5 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
62.5 W
Package / Case
POWERPAK - 1212 - 8
Technology
Si
Number of Channels
1 Channel
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
26 nC

Description

SQS423EN-T1-GE3  Product Details


FEATURES

• TrenchFET® power MOSFET
• AEC-Q101 qualified
d
• 100 % R
g and UIS tested
• Material categorization:for definitions of compliance please see  
www.vishay.com/doc?99912

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Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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