- Manufacturer:
- Toshiba
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- TO-263-3
- Transistor Polarity:
- N-Channel
- Number of Channels:
- 1 Channel
- Vds - Drain-Source Breakdown Voltage:
- 30 V
- Id - Continuous Drain Current:
- 100 mA
- Rds On - Drain-Source Resistance:
- 4 Ohms
- Vgs - Gate-Source Voltage:
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage:
- 800 mV
- Qg - Gate Charge:
- -
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 200 mW
- Channel Mode:
- Enhancement
- Qualification:
- AEC-Q101
- Tradename:
- MOSVI
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Brand:
- Toshiba
- Configuration:
- Single
- Forward Transconductance - Min:
- 25 mS
- Product Type:
- MOSFET
- Series:
- SSM3K15F
- Factory Pack Quantity:
- 3000
- Subcategory:
- MOSFETs
- Typical Turn-Off Delay Time:
- 180 ns
- Typical Turn-On Delay Time:
- 50 ns
- Unit Weight:
- 0.139332 oz
