- Manufacturer:
- Toshiba
- Product Category:
- MOSFET
- Technology:
- Si
- Mounting Style:
- SMD/SMT
- Package / Case:
- ES6-6
- Transistor Polarity:
- N-Channel, P-Channel
- Number of Channels:
- 2 Channel
- Vds - Drain-Source Breakdown Voltage:
- 20 V
- Id - Continuous Drain Current:
- 180 mA, 100 mA
- Rds On - Drain-Source Resistance:
- 20 Ohms, 44 Ohms
- Vgs - Gate-Source Voltage:
- - 10 V, + 10 V
- Vgs th - Gate-Source Threshold Voltage:
- 400 mV
- Qg - Gate Charge:
- -
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Pd - Power Dissipation:
- 150 mW
- Channel Mode:
- Enhancement
- Qualification:
- AEC-Q101
- Tradename:
- MOSVI
- Packaging:
- Reel
- Packaging:
- Cut Tape
- Packaging:
- MouseReel
- Brand:
- Toshiba
- Configuration:
- Dual
- Height:
- 0.55 mm
- Length:
- 1.6 mm
- Product Type:
- MOSFET
- Series:
- SSM6L35
- Factory Pack Quantity:
- 4000
- Subcategory:
- MOSFETs
- Width:
- 1.2 mm
- Unit Weight:
- 0.000289 oz
