- Part Number
- SSM6N57NU,LF
- Manufacturer
- Toshiba Semiconductor and Storage
- Description
- MOSFET 2N-CH 30V 4A UDFN6
- Package
- 6-WDFN Exposed Pad
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 4A
- Rds On (Max) @ Id, Vgs
- 46 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds
- 310pF @ 10V
- Power - Max
- 1W
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Surface Mount
- Package / Case
- 6-WDFN Exposed Pad
- Supplier Device Package
