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STB21NM60N original picture
STB21NM60N medium  picture
STB21NM60N thumbnail  picture
*Images are for reference only.

STB21NM60N

MOSFET N-Ch 600 V 0.19 Ohm 17 A 2nd Gen MDmesh Complete Your Design

Manufacturer:
STMicroelectronics
Package:
TO-263-3
Packing:
Reel
Datasheet:
STB21NM60N
Delivery services:
Payment method:
In stock:
2273
Order quantity:

Specifications

Manufacturer:
STMicroelectronics
Product Category:
MOSFET
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
17 A
Rds On - Drain-Source Resistance:
190 mOhms
Vgs - Gate-Source Voltage:
- 25 V, + 25 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
140 W
Channel Mode:
Enhancement
Packaging:
Reel
Packaging:
Cut Tape
Packaging:
MouseReel
Brand:
STMicroelectronics
Configuration:
Single
Fall Time:
31 ns
Forward Transconductance - Min:
12 S
Height:
4.6 mm
Length:
10.4 mm
Product Type:
MOSFET
Rise Time:
15 ns
Series:
STW21NM60N
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Type:
Power MOSFET
Typical Turn-Off Delay Time:
84 ns
Typical Turn-On Delay Time:
22 ns
Width:
9.35 mm
Unit Weight:
0.139332 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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