STD4NK60ZT4

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Transistor Polarity:

N-Channel

Number of Channels:

1 Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

2 Ohms

Vgs - Gate-Source Voltage:

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage:

3 V

Qg - Gate Charge:

26 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

70 W

Channel Mode:

Enhancement

Tradename:

SuperMESH

Packaging:

Reel

Packaging:

Cut Tape

Brand:

STMicroelectronics

Configuration:

Single

Fall Time:

16.5 ns

Forward Transconductance - Min:

3 S

Height:

2.4 mm

Length:

6.6 mm

Product Type:

MOSFET

Rise Time:

9.5 ns

Series:

STD4NK60ZT4

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Transistor Type:

1 N-Channel

Type:

MOSFET

Typical Turn-Off Delay Time:

29 ns

Typical Turn-On Delay Time:

12 ns

Width:

6.2 mm

Unit Weight:

0.011640 oz