- Manufacturer:
- STMicroelectronics
- Product Category:
- IGBT Transistors
- Technology:
- Si
- Package / Case:
- ISOTOP-4
- Mounting Style:
- Through Hole
- Configuration:
- Single Dual Emitter
- Collector- Emitter Voltage VCEO Max:
- 600 V
- Collector-Emitter Saturation Voltage:
- 2.5 V
- Maximum Gate Emitter Voltage:
- 20 V
- Continuous Collector Current at 25 C:
- 50 A
- Pd - Power Dissipation:
- 260 W
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 150 C
- Series:
- STGE50NC60WD
- Packaging:
- Tube
- Brand:
- STMicroelectronics
- Gate-Emitter Leakage Current:
- 100 nA
- Height:
- 9.1 mm
- Length:
- 38.2 mm
- Product Type:
- IGBT Transistors
- Factory Pack Quantity:
- 10
- Subcategory:
- IGBTs
- Width:
- 25.5 mm
- Unit Weight:
- 1 oz
