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STGP10NB60SD original picture
STGP10NB60SD medium  picture
STGP10NB60SD thumbnail  picture
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STGP10NB60SD

IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH Complete Your Design

Manufacturer:
STMicroelectronics
Package:
TO-220-3
Packing:
Tube
Datasheet:
STGP10NB60SD
Delivery services:
Payment method:
In stock:
3447
Order quantity:

Specifications

Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
Technology:
Si
Package / Case:
TO-220-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Maximum Gate Emitter Voltage:
20 V
Pd - Power Dissipation:
3.5 W
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Series:
STGP10NB60SD
Packaging:
Tube
Brand:
STMicroelectronics
Continuous Collector Current Ic Max:
20 A
Height:
9.15 mm
Length:
10.4 mm
Product Type:
IGBT Transistors
Factory Pack Quantity:
1000
Subcategory:
IGBTs
Width:
4.6 mm
Unit Weight:
0.211644 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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