- Manufacturer:
- STMicroelectronics
- Product Category:
- IGBT Transistors
- Technology:
- Si
- Package / Case:
- TO-3P
- Mounting Style:
- Through Hole
- Configuration:
- Single
- Collector- Emitter Voltage VCEO Max:
- 600 V
- Collector-Emitter Saturation Voltage:
- 2.35 V
- Maximum Gate Emitter Voltage:
- 20 V
- Continuous Collector Current at 25 C:
- 60 A
- Pd - Power Dissipation:
- 258 W
- Minimum Operating Temperature:
- - 55 C
- Maximum Operating Temperature:
- + 175 C
- Series:
- STGWT30V60DF
- Packaging:
- Tube
- Brand:
- STMicroelectronics
- Gate-Emitter Leakage Current:
- 250 nA
- Product Type:
- IGBT Transistors
- Factory Pack Quantity:
- 300
- Subcategory:
- IGBTs
- Unit Weight:
- 0.238311 oz
