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STGYA120M65DF2AG

IGBT Transistors Automotive-grade trench gate field-stop IGBT, M series 650 V, 120 A low loss Complete Your Design

Manufacturer:
STMicroelectronics
Package:
MAX-247-3
Packing:
Tube
Datasheet:
STGYA120M65DF2AG
Delivery services:
Payment method:
In stock:
3340
Order quantity:

Specifications

Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
Technology:
Si
Package / Case:
MAX-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
1.65 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
160 A
Pd - Power Dissipation:
625 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
STGYA120M65DF2AG
Qualification:
AEC-Q101
Packaging:
Tube
Brand:
STMicroelectronics
Gate-Emitter Leakage Current:
250 uA
Product Type:
IGBT Transistors
Factory Pack Quantity:
600
Subcategory:
IGBTs
Unit Weight:
0.156264 oz
Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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