Automotive-grade N-channel 40 V, 1.3 mΩ typ., 120 A
STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Features
Designed for automotive applications and AEC-Q101 qualified
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Wettable flank package
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
