- Part Number
- STP11N65M5
- Manufacturer
- STMicroelectronics
- Description
- MOSFET N CH 650V 9A TO-220
- Package
- TO-220-3
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650V
- Current - Continuous Drain (Id) @ 25°C
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 644pF @ 100V
- Vgs (Max)
- ±25V
- FET Feature
- -
- Power Dissipation (Max)
- 85W (Tc)
- Rds On (Max) @ Id, Vgs
- 480 mOhm @ 4.5A, 10V
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-220
- Package / Case
