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STW5NK100Z medium  picture
STW5NK100Z thumbnail  picture
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STW5NK100Z

MOSFET N-Ch 1000 Volt 3.5 A Zener SuperMESH Complete Your Design

Manufacturer:
STMicroelectronics
Package:
TO-247-3
Packing:
Tube
Datasheet:
STW5NK100Z
Delivery services:
Payment method:
In stock:
2112
Order quantity:

Specifications

Manufacturer:
STMicroelectronics
Product Category:
MOSFET
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Transistor Polarity:
N-Channel
Number of Channels:
1 Channel
Vds - Drain-Source Breakdown Voltage:
1 kV
Id - Continuous Drain Current:
3.5 A
Rds On - Drain-Source Resistance:
2.7 Ohms
Vgs - Gate-Source Voltage:
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
42 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Channel Mode:
Enhancement
Tradename:
SuperMESH
Packaging:
Tube
Brand:
STMicroelectronics
Configuration:
Single
Fall Time:
19 ns
Forward Transconductance - Min:
4 S
Height:
20.15 mm
Length:
15.75 mm
Product Type:
MOSFET
Rise Time:
7.7 ns
Series:
STW5NK100Z
Factory Pack Quantity:
600
Subcategory:
MOSFETs
Transistor Type:
1 N-Channel
Type:
MOSFET
Typical Turn-Off Delay Time:
51.5 ns
Typical Turn-On Delay Time:
22.5 ns
Width:
5.15 mm
Unit Weight:
0.211644 oz

Description

The STW5NK100Z is a specific part number for a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is an N-channel enhancement-mode power MOSFET designed for high-voltage and high-current applications.


Here are some key features and specifications of the STW5NK100Z power MOSFET:


1. MOSFET Type: N-Channel Enhancement Mode MOSFET

2. Maximum Drain-Source Voltage (VDS): Typically rated at around 100V.

3. Continuous Drain Current (ID): Typically rated at a certain value, such as several Amperes, which represents the maximum current that can flow from the drain to the source continuously.

4. Low On-Resistance (RDS(ON)): This parameter indicates how much resistance the MOSFET has when it is fully turned on. Lower RDS(ON) values mean less voltage drop across the MOSFET and lower power dissipation.

5. Gate-Source Voltage (VGS) Threshold: The voltage at which the MOSFET starts to conduct significantly between the drain and the source when a voltage is applied to the gate terminal.

6. Package Type: The STW5NK100Z is typically available in a TO-247 package, a popular package for high-power applications.


Applications:

The STW5NK100Z power MOSFET is commonly used in various high-power applications, including but not limited to:


1. Switching Power Supplies: It can be used in the output stages of switching power supplies for efficient voltage conversion.

2. Motor Control: The MOSFET is suitable for motor control applications, including motor drivers and speed control circuits.

3. Industrial and Automotive Applications: It finds use in industrial and automotive systems where high-voltage and high-current capabilities are required.

4. Inverters and Converters: The STW5NK100Z can be used in inverters and converters for energy conversion in renewable energy systems and motor drives.


Service Guarantees

Service Guarantees

We guarantee 100% customer satisfaction.
Our experienced sales team and tech support team back our services to satisfy all our customers.
Quality Guarantees

Quality Guarantees

We provide 90 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.

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